Professor Kim Jun-ho's research team in the Department of Physics publishes the results of research on caste light thin film solar cells (Energy & Environmental Science)

NO
399023
Date
2024-12-23
modification day
2024-12-23
Writer
홍보팀 (032-835-9490)
Count
3106

Ag 도핑효과에 따라 반도체 결함 제어가 가능함을 보여주는 논문 개념도

A paper conceptual diagram showing that semiconductor defects can be controlled according to Ag doping effect


Professor Kim Jun-ho's laboratory in the Department of Physics proposed a plan to improve the efficiency of Kestrite thin-film solar cells through joint research with researchers from DGIST and Kwangwoon University.


It was discovered that semiconductor defects can be effectively controlled by the method of doping silver (Ag) on the caste light-absorbing layer, and the results of the experiment were published online in Energy & Environmental Science (I.F.= 32.4), a leading journal in the field of energy under the title of "Reducing carrier recombination loss by suppressing Sn loss and defect formation via Ag doping in Cu2ZnSn(S,Se)4 solid cells." (2024, 10.1).


In this study, Professor Kim Jun-ho served as a co-corresponding author, and Dr. Kim Sung-yeon of DGIST, the first author of this paper, is a physics graduate from Incheon National University who obtained a doctorate from the laboratory.


Dr. Kim Sung-yeon and Prof. Kim Jun-ho

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